J309, J310
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate?Source Breakdown Voltage
(IG
= ?1.0
Adc, VDS
= 0)
V(BR)GSS
?25
?
?
Vdc
Gate Reverse Current
(VGS
= ?15 Vdc, V
DS
= 0, T
A
= 25
°C)
(VGS
= ?15 Vdc, V
DS
= 0, T
A
= +125
°C)
IGSS
?
?
?
?
?1.0
?1.0
nAdc
Adc
Gate Source Cutoff Voltage
(VDS
= 10 Vdc, I
D
= 1.0 nAdc) J309
J310
VGS(off)
?1.0
?2.0
?
?
?4.0
?6.5
Vdc
ON CHARACTERISTICS
Zero?Gate?Voltage Drain Current(1)
(VDS
= 10 Vdc, V
GS
= 0) J309
J310
IDSS
12
24
?
?
30
60
mAdc
Gate?Source Forward Voltage
(VDS
= 0, I
G
= 1.0 mAdc)
VGS(f)
?
?
1.0
Vdc
SMALL?SIGNAL CHARACTERISTICS
Common?Source Input Conductance
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 100 MHz) J309
J310
Re(yis)
?
?
0.7
0.5
?
?
mmhos
Common?Source Output Conductance
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 100 MHz)
Re(yos)
?
0.25
?
mmhos
Common?Gate Power Gain
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 100 MHz)
Gpg
?
16
?
dB
Common?Source Forward Transconductance
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 100 MHz)
Re(yfs)
?
12
?
mmhos
Common?Gate Input Conductance
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 100 MHz)
Re(yig)
?
12
?
mmhos
Common?Source Forward Transconductance
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz) J309
J310
gfs
10000
8000
?
?
20000
18000
mhos
Common?Source Output Conductance
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz)
gos
?
?
250
mhos
Common?Gate Forward Transconductance
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz) J309
J310
gfg
?
?
13000
12000
?
?
mhos
Common?Gate Output Conductance
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz) J309
J310
gog
?
?
100
150
?
?
mhos
Gate?Drain Capacitance
(VDS
= 0, V
GS
= ?10 Vdc, f = 1.0 MHz)
Cgd
?
1.8
2.5
pF
Gate?Source Capacitance
(VDS
= 0, V
GS
= ?10 Vdc, f = 1.0 MHz)
Cgs
?
4.3
5.0
pF
FUNCTIONAL CHARACTERISTICS
Equivalent Short?Circuit Input Noise Voltage
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 100 Hz)
en
?
10
?
nVHz
1. Pulse Test: Pulse Width
300
s, Duty Cycle
3.0%.
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